Low - Resistance 2 D / 2 D Ohmic Contacts : A Universal Approach to 2 High - Performance WSe 2 , MoS 2 , and MoSe 2 Transistors
نویسندگان
چکیده
2 High-Performance WSe2, MoS2, and MoSe2 Transistors 3 Hsun-Jen Chuang,† Bhim Chamlagain,† Michael Koehler,‡ Meeghage Madusanka Perera,† Jiaqiang Yan,‡,§ 4 David Mandrus,‡,§ David Tomańek, and Zhixian Zhou*,† 5 †Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48201, United States 6 ‡Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States 7 Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States 8 Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States
منابع مشابه
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances o...
متن کاملHigh-performance single layered WSe₂ p-FETs with chemically doped contacts.
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Speci...
متن کاملHigh performance multilayer MoS2 transistors with scandium contacts.
While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right c...
متن کاملRole of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.
This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orb...
متن کامل